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- Manufacturer No：IRFR5410TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFR5410TRPBF
- SKU：2711146
- Description：MOSFET P-CH 100V 13A DPAK
User Guide
User Guide
IRFR5410TRPBF Details
MOSFET P-CH 100V 13A DPAK
IRFR5410TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drain to Source Voltage (Vdss): 100V
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Published: 1999
- Vgs (Max): ±20V
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type: P-Channel
- Series: HEXFET?
- Power Dissipation: 66W
- JEDEC-95 Code: TO-252AA
- Length: 6.7056mm
- Recovery Time: 190 ns
- Drain to Source Breakdown Voltage: -100V
- Height: 2.52mm
- Threshold Voltage: -4V
- Current - Continuous Drain (Id) @ 25°C: 13A Tc
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Power Dissipation-Max: 66W Tc
- Current Rating: -13A
- Additional Feature: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Case Connection: DRAIN
- Turn On Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn-Off Delay Time: 45 ns
- Width: 6.22mm
- Lead Free: Contains Lead, Lead Free
- Pulsed Drain Current-Max (IDM): 52A
- Voltage - Rated DC: -100V
- Dual Supply Voltage: -100V
- Fall Time (Typ): 46 ns
- Rise Time: 58 ns
- Resistance: 205mOhm
- Nominal Vgs: -4 V
- Continuous Drain Current (ID): -13A
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
- Rds On (Max) @ Id, Vgs: 205m Ω @ 7.8A, 10V
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