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  • Manufacturer No:
    IPP023NE7N3G
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPP023NE7N3G
  • SKU:
    2711178
  • Description:
    MOSFET N-CH 75V 120A TO220

IPP023NE7N3G Details

MOSFET N-CH 75V 120A TO220

IPP023NE7N3G Specification Parameters

  • Surface Mount: NO
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Transistor Element Material: SILICON
  • DS Breakdown Voltage-Min: 75V
  • Terminal Position: SINGLE
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code: TO-220AB
  • Drain Current-Max (Abs) (ID): 120A
  • Current - Continuous Drain (Id) @ 25°C: 120A Tc
  • Drain-source On Resistance-Max: 0.0023Ohm
  • Rds On (Max) @ Id, Vgs: 2.3m Ω @ 100A, 10V
  • Series: OptiMOS? 3
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 37.5V
  • Mounting Type: Through Hole
  • RoHS Status: RoHS Compliant
  • Pbfree Code: yes
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Pin Count: 3
  • Published: 2011
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Drain to Source Voltage (Vdss): 75V
  • Reach Compliance Code: compliant
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • JESD-30 Code: R-PSFM-T3
  • Power Dissipation-Max: 300W Tc
  • Pulsed Drain Current-Max (IDM): 480A
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Avalanche Energy Rating (Eas): 1100 mJ
  • Vgs(th) (Max) @ Id: 3.8V @ 273μA

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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