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  • Manufacturer No:
    IRGB20B60PD1PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    IRGB20B60PD1PBF
  • SKU:
    2711289
  • Description:
    IGBT 600V 40A 215W TO220AB

IRGB20B60PD1PBF Details

IGBT 600V 40A 215W TO220AB

IRGB20B60PD1PBF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • RoHS Status: RoHS Compliant
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Number of Pins: 3
  • Factory Lead Time: 16 Weeks
  • Element Configuration: Single
  • Collector Emitter Voltage (VCEO): 2.8V
  • Collector Emitter Breakdown Voltage: 600V
  • Published: 2003
  • Current Rating: 40A
  • Current - Collector (Ic) (Max): 40A
  • Supplier Device Package: TO-220AB
  • Current - Collector Pulsed (Icm): 80A
  • Reverse Recovery Time: 28 ns
  • Weight: 6.000006g
  • Turn-Off Delay Time: 115 ns
  • Height: 8.763mm
  • Power Dissipation: 215W
  • Power - Max: 215W
  • Gate Charge: 68nC
  • Switching Energy: 95μJ (on), 100μJ (off)
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Packaging: Tube
  • REACH SVHC: No SVHC
  • Max Operating Temperature: 150°C
  • Input Type: Standard
  • Voltage - Rated DC: 600V
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Operating Temperature: -55°C~150°C TJ
  • Max Collector Current: 40A
  • Package / Case: TO-220-3
  • Rise Time: 5ns
  • Turn On Delay Time: 20 ns
  • Collector Emitter Saturation Voltage: 2.05V
  • IGBT Type: NPT
  • Width: 4.69mm
  • Length: 10.5156mm
  • Max Power Dissipation: 215W
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Td (on/off) @ 25°C: 20ns/115ns
  • Test Condition: 390V, 13A, 10Ohm, 15V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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