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  • Manufacturer No:
    IRL3716PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRL3716PBF
  • SKU:
    2711559
  • Description:
    MOSFET N-CH 20V 180A TO-220AB

IRL3716PBF Details

MOSFET N-CH 20V 180A TO-220AB

IRL3716PBF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Number of Pins: 3
  • Threshold Voltage: 3V
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Breakdown Voltage: 20V
  • Published: 2004
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±20V
  • Supplier Device Package: TO-220AB
  • Resistance: 4Ohm
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Nominal Vgs: 3 V
  • Current Rating: 180A
  • Turn-Off Delay Time: 38 ns
  • Current - Continuous Drain (Id) @ 25°C: 180A Tc
  • Drain to Source Resistance: 4.8mOhm
  • Rds On Max: 4 mΩ
  • Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 10V
  • Input Capacitance: 5.09nF
  • Mounting Type: Through Hole
  • RoHS Status: RoHS Compliant
  • Min Operating Temperature: -55°C
  • Packaging: Tube
  • REACH SVHC: No SVHC
  • Max Operating Temperature: 175°C
  • Voltage - Rated DC: 20V
  • Drain to Source Voltage (Vdss): 20V
  • Dual Supply Voltage: 20V
  • FET Type: N-Channel
  • Operating Temperature: -55°C~175°C TJ
  • Package / Case: TO-220-3
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Series: HEXFET?
  • Turn On Delay Time: 18 ns
  • Continuous Drain Current (ID): 180A
  • Fall Time (Typ): 36 ns
  • Power Dissipation: 210W
  • Rise Time: 140ns
  • Power Dissipation-Max: 210W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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