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Inventory:1711
  • Qty Unit Price price
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  • 10 $289.517 $2895.17
  • 100 $286.65 $28665
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  • Manufacturer No:
    IRF1310NPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF1310NPBF
  • SKU:
    2712025
  • Description:
    MOSFET N-CH 100V 42A TO-220AB

IRF1310NPBF Details

MOSFET N-CH 100V 42A TO-220AB

IRF1310NPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • Radiation Hardening: No
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Lead Pitch: 2.54mm
  • Voltage - Rated DC: 100V
  • Dual Supply Voltage: 100V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Threshold Voltage: 2V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Series: HEXFET?
  • Turn On Delay Time: 11 ns
  • Continuous Drain Current (ID): 42A
  • Power Dissipation: 160W
  • Lead Free: Contains Lead, Lead Free
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
  • Current - Continuous Drain (Id) @ 25°C: 42A Tc
  • Length: 10.5156mm
  • Avalanche Energy Rating (Eas): 420 mJ
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Contact Plating: Tin
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 100V
  • Max Junction Temperature (Tj): 175°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Published: 1998
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • Fall Time (Typ): 40 ns
  • Turn-Off Delay Time: 45 ns
  • Current Rating: 42A
  • Height: 19.8mm
  • Nominal Vgs: 4 V
  • Rise Time: 56 ns
  • Recovery Time: 270 ns
  • Width: 4.69mm
  • Power Dissipation-Max: 160W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Rds On (Max) @ Id, Vgs: 36m Ω @ 22A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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