Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
- 1 $1.262 $1.262
- 10 $1.249 $12.49
- 100 $1.236 $123.6
- 1000 $1.223 $1223
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：IRF3710ZPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF3710ZPBF
- SKU：2712282
- Description：Mosfet, Power; N-ch; Vdss 100V; Rds(on) 14MILLIOHMS; Id 59A; TO-220AB; Pd 160W; -55DEG
User Guide
User Guide
IRF3710ZPBF Details
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 14MILLIOHMS; Id 59A; TO-220AB; Pd 160W; -55DEG
IRF3710ZPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Lead Pitch: 2.54mm
- Voltage - Rated DC: 100V
- Dual Supply Voltage: 100V
- Max Junction Temperature (Tj): 175°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Terminal Finish: MATTE TIN OVER NICKEL
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- Reverse Recovery Time: 50 ns
- Peak Reflow Temperature (Cel): 250
- Recovery Time: 75 ns
- Resistance: 18mOhm
- Power Dissipation: 160W
- Nominal Vgs: 4 V
- Fall Time (Typ): 56 ns
- Avalanche Energy Rating (Eas): 200 mJ
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Rise Time: 77 ns
- Current Rating: 59A
- Current - Continuous Drain (Id) @ 25°C: 59A Tc
- Rds On (Max) @ Id, Vgs: 18m Ω @ 35A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Published: 2003
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Series: HEXFET?
- Turn On Delay Time: 17 ns
- Height: 19.8mm
- Pulsed Drain Current-Max (IDM): 240A
- Turn-Off Delay Time: 41 ns
- Length: 10.54mm
- Width: 4.69mm
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Continuous Drain Current (ID): 59A
- Power Dissipation-Max: 160W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
Search for similar products
IRF3710ZPBF Similar Products
The four parts on the right have similar specifications to Infineon & IRF3710ZPBF
Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
