IRF1404PBFInfineon
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    Inventory:2282
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    • 100 $1.736 $173.6
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    • Manufacturer No：
      IRF1404PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF1404PBF
    • SKU：
      2712387
    • Description：
      MOSFET N-CH 40V 202A TO-220AB

    User Guide

    User Guide

    IRF1404PBF Details

    MOSFET N-CH 40V 202A TO-220AB

    IRF1404PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • Lead Pitch: 2.54mm
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Voltage - Rated DC: 40V
    • Dual Supply Voltage: 40V
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Width: 4.826mm
    • Height: 19.8mm
    • Length: 10.668mm
    • Nominal Vgs: 4 V
    • Turn-Off Delay Time: 46 ns
    • Current Rating: 162A
    • Power Dissipation: 333W
    • Power Dissipation-Max: 333W Tc
    • Vgs (Max): ┬?20V
    • Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
    • Series: HEXFET┬?
    • Input Capacitance (Ciss) (Max) @ Vds: 5669pF @ 25V
    • Current - Continuous Drain (Id) @ 25┬?C: 202A Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • Number of Channels: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Packaging: Tube
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 40V
    • Published: 2003
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Drain Current-Max (Abs) (ID): 75A
    • Turn On Delay Time: 17 ns
    • Fall Time (Typ): 33 ns
    • Resistance: 4mOhm
    • Rise Time: 190 ns
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    • Continuous Drain Current (ID): 202A
    • Recovery Time: 117 ns
    • Max Junction Temperature (Tj): 175┬?C
    • Operating Temperature: -55┬?C~175┬?C TJ
    • Vgs(th) (Max) @ Id: 4V @ 250╬╝A
    • Avalanche Energy Rating (Eas): 620 mJ
    • Pulsed Drain Current-Max (IDM): 808A
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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