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- Manufacturer No：SI2312BDS-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2312BDS-T1-E3
- SKU：271254
- Description：VISHAY SILICONIX SI2312BDS-T1-E3 MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL
User Guide
User Guide
SI2312BDS-T1-E3 Details
VISHAY SILICONIX SI2312BDS-T1-E3 MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL
SI2312BDS-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 10 ns
- Rise Time: 30 ns
- Turn On Delay Time: 9 ns
- Vgs (Max): ±8V
- Weight: 1.437803g
- Threshold Voltage: 850mV
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Vgs(th) (Max) @ Id: 850mV @ 250μA
- Nominal Vgs: 450 mV
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Termination: SMD/SMT
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2008
- Continuous Drain Current (ID): 5A
- Element Configuration: Single
- Dual Supply Voltage: 20V
- Power Dissipation: 750mW
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Width: 1.397mm
- Turn-Off Delay Time: 35 ns
- Height: 1.016mm
- Series: TrenchFET?
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Resistance: 31mOhm
- Length: 3.0226mm
- Power Dissipation-Max: 750mW Ta
- Current - Continuous Drain (Id) @ 25°C: 3.9A Ta
- Rds On (Max) @ Id, Vgs: 31m Ω @ 5A, 4.5V
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