Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:13389
- Qty Unit Price price
- 1 $4.206 $4.206
- 10 $4.164 $41.64
- 100 $4.122 $412.2
- 1000 $4.081 $4081
- 10000 $4.04 $40400
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：IRFP260NPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFP260NPBF
- SKU：2712985
- Description：Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.04 Ohm; Id 50A; TO-247AC; Pd 300W; Vgs +/-20V
User Guide
User Guide
IRFP260NPBF Details
Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.04 Ohm; Id 50A; TO-247AC; Pd 300W; Vgs +/-20V
IRFP260NPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Termination: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 3
- REACH SVHC: No SVHC
- Voltage - Rated DC: 200V
- Dual Supply Voltage: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Published: 2004
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Current Rating: 50A
- Width: 5.3mm
- Case Connection: DRAIN
- Pulsed Drain Current-Max (IDM): 200A
- Peak Reflow Temperature (Cel): 250
- Series: HEXFET?
- Resistance: 40mOhm
- Turn-Off Delay Time: 55 ns
- JEDEC-95 Code: TO-247AC
- Power Dissipation-Max: 300W Tc
- Fall Time (Typ): 48 ns
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Avalanche Energy Rating (Eas): 560 mJ
- Recovery Time: 402 ns
- Rds On (Max) @ Id, Vgs: 40m Ω @ 28A, 10V
- RoHS Status: ROHS3 Compliant
- Packaging: Bulk
- Mount: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Number of Pins: 3
- Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
- Drain to Source Breakdown Voltage: 200V
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 50A
- Power Dissipation: 300W
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-247-3
- Length: 15.875mm
- Rise Time: 60ns
- Turn On Delay Time: 17 ns
- Nominal Vgs: 4 V
- Lead Free: Contains Lead, Lead Free
- Current - Continuous Drain (Id) @ 25°C: 50A Tc
- Height: 20.2946mm
- Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4057pF @ 25V
Search for similar products
IRFP260NPBF Similar Products
The four parts on the right have similar specifications to Infineon & IRFP260NPBF
Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
