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  • Manufacturer No:
    IRFU3303PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFU3303PBF
  • SKU:
    2713081
  • Description:
    MOSFET N-CH 30V 33A I-PAK

IRFU3303PBF Details

MOSFET N-CH 30V 33A I-PAK

IRFU3303PBF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Packaging: Tube
  • Max Operating Temperature: 150°C
  • Element Configuration: Single
  • Voltage - Rated DC: 30V
  • Drain to Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Height: 6.22mm
  • Turn-Off Delay Time: 16 ns
  • Current Rating: 33A
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Width: 2.3876mm
  • Drain to Source Resistance: 31mOhm
  • Power Dissipation: 57W
  • Power Dissipation-Max: 57W Tc
  • Supplier Device Package: IPAK (TO-251)
  • Rise Time: 99ns
  • Mounting Type: Through Hole
  • RoHS Status: RoHS Compliant
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Number of Pins: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Voltage (Vdss): 30V
  • Published: 2004
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Series: HEXFET?
  • Turn On Delay Time: 11 ns
  • Continuous Drain Current (ID): 33A
  • Input Capacitance: 750pF
  • Fall Time (Typ): 28 ns
  • Length: 6.7056mm
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 33A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
  • Rds On Max: 31 mΩ
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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