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  • Manufacturer No:
    IRF9520NPBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2713260
  • Description:
    INFINEON IRF9520NPBF MOSFET Transistor, P Channel, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
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  • 10 $1.146 $11.46
  • 100 $1.134 $113.4
  • 1000 $1.122 $1122

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  • Manufacturer No:
    IRF9520NPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF9520NPBF
  • SKU:
    2713260
  • Description:
    INFINEON IRF9520NPBF MOSFET Transistor, P Channel, 6.8 A, -100 V, 480 mohm, -10 V, -4 V

IRF9520NPBF Details

INFINEON IRF9520NPBF MOSFET Transistor, P Channel, 6.8 A, -100 V, 480 mohm, -10 V, -4 V

IRF9520NPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Lead Pitch: 2.54mm
  • Drain to Source Voltage (Vdss): 100V
  • Max Operating Temperature: 175°C
  • Gate to Source Voltage (Vgs): 20V
  • Transistor Application: SWITCHING
  • Published: 1998
  • Subcategory: Other Transistors
  • JEDEC-95 Code: TO-220AB
  • FET Type: P-Channel
  • Peak Reflow Temperature (Cel): 250
  • Series: HEXFET?
  • Pulsed Drain Current-Max (IDM): 27A
  • Max Power Dissipation: 48W
  • Fall Time (Typ): 31 ns
  • Drain to Source Breakdown Voltage: -100V
  • Rise Time: 47 ns
  • Resistance: 480mOhm
  • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Nominal Vgs: -4 V
  • Current Rating: -6.8A
  • Rds On (Max) @ Id, Vgs: 480m Ω @ 4A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Min Operating Temperature: -55°C
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 30
  • Element Configuration: Single
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • Case Connection: DRAIN
  • Height: 15.24mm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Recovery Time: 150 ns
  • Turn On Delay Time: 14 ns
  • Turn-Off Delay Time: 28 ns
  • Power Dissipation: 48W
  • Voltage - Rated DC: -100V
  • Dual Supply Voltage: -100V
  • Length: 10.54mm
  • Threshold Voltage: -4V
  • Width: 4.69mm
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A Tc
  • Continuous Drain Current (ID): -6.8A

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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