IRFH5020TRPBFInfineon
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    • Manufacturer No：
      IRFH5020TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFH5020TRPBF
    • SKU：
      2714512
    • Description：
      MOSFET N-CH 200V 5.1A 8PQFN

    User Guide

    User Guide

    IRFH5020TRPBF Details

    MOSFET N-CH 200V 5.1A 8PQFN

    IRFH5020TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Threshold Voltage: 5V
    • REACH SVHC: No SVHC
    • Number of Terminations: 5
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Width: 5mm
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 6 ns
    • Resistance: 55mOhm
    • Turn-Off Delay Time: 21 ns
    • Continuous Drain Current (ID): 5.1A
    • Drain Current-Max (Abs) (ID): 43A
    • Turn On Delay Time: 9.3 ns
    • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 5.1A Ta
    • Power Dissipation-Max: 3.6W Ta 8.3W Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Factory Lead Time: 12 Weeks
    • Published: 2012
    • Drain to Source Breakdown Voltage: 200V
    • Max Junction Temperature (Tj): 150°C
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Length: 6mm
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Additional Feature: HIGH RELIABILITY
    • Case Connection: DRAIN
    • Height: 1.05mm
    • Series: HEXFET?
    • Package / Case: 8-PowerTDFN
    • Pulsed Drain Current-Max (IDM): 63A
    • Power Dissipation: 3.6W
    • Rise Time: 7.7 ns
    • JESD-30 Code: R-PDSO-N5
    • Avalanche Energy Rating (Eas): 320 mJ
    • Vgs(th) (Max) @ Id: 5V @ 150μA
    • Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 100V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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