IRLR3636TRPBFInfineon
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    Inventory:25698
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    • 10 $313.214 $3132.14
    • 100 $310.112 $31011.2
    • 1000 $307.041 $307041
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    • Manufacturer No：
      IRLR3636TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLR3636TRPBF
    • SKU：
      2715034
    • Description：
      MOSFET N-CH 60V 50A DPAK

    User Guide

    User Guide

    IRLR3636TRPBF Details

    MOSFET N-CH 60V 50A DPAK

    IRLR3636TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Factory Lead Time: 12 Weeks
    • Terminal Form: GULL WING
    • Drain to Source Breakdown Voltage: 60V
    • Threshold Voltage: 2.5V
    • Published: 2009
    • Element Configuration: Single
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Series: HEXFET?
    • Width: 6.22mm
    • Vgs (Max): ±16V
    • Turn-Off Delay Time: 43 ns
    • Height: 2.52mm
    • Fall Time (Typ): 69 ns
    • Vgs(th) (Max) @ Id: 2.5V @ 100μA
    • Rise Time: 216 ns
    • Input Capacitance (Ciss) (Max) @ Vds: 3779pF @ 50V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Voltage: 60V
    • Max Junction Temperature (Tj): 175°C
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 16V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Current: 50A
    • Case Connection: DRAIN
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Turn On Delay Time: 45 ns
    • JEDEC-95 Code: TO-252AA
    • Length: 6.7056mm
    • Current - Continuous Drain (Id) @ 25°C: 50A Tc
    • Continuous Drain Current (ID): 99A
    • Power Dissipation: 143W
    • Power Dissipation-Max: 143W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 6.8m Ω @ 50A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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