IRLML2502TRPBFInfineon
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    • Manufacturer No：
      IRLML2502TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLML2502TRPBF
    • SKU：
      2715357
    • Description：
      MOSFET N-CH 20V 4.2A SOT-23

    User Guide

    User Guide

    IRLML2502TRPBF Details

    MOSFET N-CH 20V 4.2A SOT-23

    IRLML2502TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Number of Terminations: 3
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Gate to Source Voltage (Vgs): 12V
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 20V
    • Dual Supply Voltage: 20V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Subcategory: FET General Purpose Power
    • Rise Time: 10 ns
    • Height: 1.016mm
    • Turn On Delay Time: 7.5 ns
    • Current Rating: 4.2A
    • Resistance: 45mOhm
    • Fall Time (Typ): 26 ns
    • Turn-Off Delay Time: 54 ns
    • Nominal Vgs: 1.2 V
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Factory Lead Time: 12 Weeks
    • Number of Pins: 3
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 20V
    • Published: 2004
    • Threshold Voltage: 1.2V
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Additional Feature: HIGH RELIABILITY
    • Width: 3.05mm
    • Length: 2.794mm
    • Power Dissipation: 1.25W
    • Series: HEXFET?
    • Continuous Drain Current (ID): 4.2A
    • Vgs (Max): ±12V
    • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250μA
    • Power Dissipation-Max: 1.25W Ta
    • Current - Continuous Drain (Id) @ 25°C: 4.2A Ta
    • Rds On (Max) @ Id, Vgs: 45m Ω @ 4.2A, 4.5V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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