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IRFR5505TRPBF123
Inventory:153605
  • Qty Unit Price price
  • 1 $0.896 $0.896
  • 10 $0.887 $8.87
  • 100 $0.878 $87.8
  • 1000 $0.869 $869
  • 10000 $0.86 $8600

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IRFR5505TRPBF
  • Manufacturer No:
    IRFR5505TRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR5505TRPBF
  • SKU:
    2716048
  • Description:
    MOSFET P-CH 55V 18A DPAK

IRFR5505TRPBF Details

MOSFET P-CH 55V 18A DPAK

IRFR5505TRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Number of Pins: 3
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: Other Transistors
  • Case Connection: DRAIN
  • Turn-Off Delay Time: 20 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Series: HEXFET?
  • Resistance: 110mOhm
  • JEDEC-95 Code: TO-252AA
  • Lead Free: Contains Lead, Lead Free
  • Pulsed Drain Current-Max (IDM): 64A
  • Current - Continuous Drain (Id) @ 25°C: 18A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Power Dissipation: 57W
  • Power Dissipation-Max: 57W Tc
  • Voltage - Rated DC: -55V
  • Nominal Vgs: -4 V
  • Continuous Drain Current (ID): -18A
  • Rds On (Max) @ Id, Vgs: 110m Ω @ 9.6A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Factory Lead Time: 12 Weeks
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 30
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Published: 1997
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Voltage (Vdss): 55V
  • JESD-30 Code: R-PSSO-G2
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • FET Type: P-Channel
  • Turn On Delay Time: 12 ns
  • Width: 6.22mm
  • Fall Time (Typ): 16 ns
  • Rise Time: 28 ns
  • Length: 6.7056mm
  • Height: 2.52mm
  • Threshold Voltage: -4V
  • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Recovery Time: 77 ns
  • Drain to Source Breakdown Voltage: -55V
  • Dual Supply Voltage: -55V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Current Rating: -18A

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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