IRLZ44NSPBFInfineon
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    • Manufacturer No：
      IRLZ44NSPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLZ44NSPBF
    • SKU：
      2716895
    • Description：
      MOSFET N-CH 55V 47A D2PAK

    User Guide

    User Guide

    IRLZ44NSPBF Details

    MOSFET N-CH 55V 47A D2PAK

    IRLZ44NSPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Number of Elements: 1
    • Surface Mount: YES
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Transistor Element Material: SILICON
    • Part Status: Discontinued
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Drain to Source Voltage (Vdss): 55V
    • Published: 1998
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Series: HEXFET?
    • Vgs(th) (Max) @ Id: 2V @ 250μA
    • Vgs (Max): ±16V
    • Drain Current-Max (Abs) (ID): 47A
    • Current - Continuous Drain (Id) @ 25°C: 47A Tc
    • Avalanche Energy Rating (Eas): 210 mJ
    • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
    • Additional Feature: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Qualification Status: Not Qualified
    • Factory Lead Time: 16 Weeks
    • Reach Compliance Code: not_compliant
    • Terminal Position: SINGLE
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • DS Breakdown Voltage-Min: 55V
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • HTS Code: 8541.29.00.95
    • Pulsed Drain Current-Max (IDM): 160A
    • Drive Voltage (Max Rds On,Min Rds On): 4V 10V
    • Drain-source On Resistance-Max: 0.025Ohm
    • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
    • Power Dissipation-Max: 3.8W Ta 110W Tc
    • Rds On (Max) @ Id, Vgs: 22m Ω @ 25A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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