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- Manufacturer No：LCMXO2280E-4TN100C
- Manufacturer：Lattice Semiconductor Corporation
- Category：Embedded - FPGAs (Field Programmable Gate Array)
- Datasheet：LCMXO2280E-4TN100C
- SKU：2716949
- Description：MachXO LCMXO2280 100-LQFP Matte Tin (Sn) field programmable gate array 1.6mm 1.2V 550MHz 4.4ns
User Guide
User Guide
LCMXO2280E-4TN100C Details
MachXO LCMXO2280 100-LQFP Matte Tin (Sn) field programmable gate array 1.6mm 1.2V 550MHz 4.4ns
LCMXO2280E-4TN100C Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 8 Weeks
- Qualification Status: Not Qualified
- Technology: CMOS
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Pitch: 0.5mm
- Terminal Position: QUAD
- Number of Terminations: 100
- Pin Count: 100
- Operating Supply Current: 20mA
- Supply Voltage: 1.2V
- Length: 14mm
- Subcategory: Field Programmable Gate Arrays
- Package / Case: 100-LQFP
- Output Function: MACROCELL
- Number of Outputs: 73
- Max Frequency: 550MHz
- Programmable Logic Type: FLASH PLD
- Series: MachXO
- Number of Logic Elements/Cells: 2280
- Base Part Number: LCMXO2280
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Pbfree Code: yes
- Lead Free: Lead Free
- Packaging: Tray
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Height Seated (Max): 1.6mm
- Number of Dedicated Inputs: 7
- HTS Code: 8542.39.00.01
- Number of Pins: 100
- Nominal Supply Current: 20mA
- Published: 2000
- Operating Supply Voltage: 1.2V
- Width: 14mm
- Memory Type: SRAM
- Operating Temperature: 0°C~85°C TJ
- Number of I/O: 73
- Voltage - Supply: 1.14V~1.26V
- Propagation Delay: 4.4 ns
- Number of LABs/CLBs: 285
- Number of Macro Cells: 1140
- Total RAM Bits: 28262
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