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- Manufacturer No：IRLR024NTRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLR024NTRPBF
- SKU：2716983
- Description：MOSFET N-CH 55V 17A DPAK
User Guide
User Guide
IRLR024NTRPBF Details
MOSFET N-CH 55V 17A DPAK
IRLR024NTRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Pins: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Max Junction Temperature (Tj): 175°C
- Element Configuration: Single
- Threshold Voltage: 2V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Voltage - Rated DC: 55V
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Turn-Off Delay Time: 20 ns
- Current Rating: 17A
- Width: 6.22mm
- Recovery Time: 90 ns
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Power Dissipation: 45W
- Fall Time (Typ): 29 ns
- Length: 6.7056mm
- Pulsed Drain Current-Max (IDM): 72A
- Turn On Delay Time: 7.1 ns
- Current - Continuous Drain (Id) @ 25°C: 17A Tc
- Additional Feature: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Avalanche Energy Rating (Eas): 68 mJ
- Rds On (Max) @ Id, Vgs: 65m Ω @ 10A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 16V
- Published: 2004
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Drain to Source Breakdown Voltage: 55V
- Dual Supply Voltage: 55V
- Case Connection: DRAIN
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Series: HEXFET?
- Continuous Drain Current (ID): 17A
- Resistance: 80mOhm
- JEDEC-95 Code: TO-252AA
- Nominal Vgs: 2 V
- Vgs (Max): ±16V
- Lead Free: Contains Lead, Lead Free
- Drive Voltage (Max Rds On,Min Rds On): 4V 10V
- Height: 2.52mm
- Power Dissipation-Max: 45W Tc
- Rise Time: 74 ns
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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