IRLL014NTRPBFInfineon
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    • Manufacturer No：
      IRLL014NTRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLL014NTRPBF
    • SKU：
      2717370
    • Description：
      MOSFET N-CH 55V 2A SOT223

    User Guide

    User Guide

    IRLL014NTRPBF Details

    MOSFET N-CH 55V 2A SOT223

    IRLL014NTRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Number of Terminations: 4
    • Terminal Form: GULL WING
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 16V
    • Drain Current-Max (Abs) (ID): 2A
    • Threshold Voltage: 2V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Voltage - Rated DC: 55V
    • Case Connection: DRAIN
    • JESD-30 Code: R-PDSO-G4
    • Width: 3.7mm
    • Package / Case: TO-261-4, TO-261AA
    • Vgs(th) (Max) @ Id: 2V @ 250μA
    • Vgs (Max): ±16V
    • Rise Time: 4.9 ns
    • Drive Voltage (Max Rds On,Min Rds On): 4V 10V
    • Power Dissipation-Max: 1W Ta
    • Current - Continuous Drain (Id) @ 25°C: 2A Ta
    • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
    • Length: 6.6802mm
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Factory Lead Time: 12 Weeks
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Element Configuration: Single
    • Current Rating: 2A
    • Continuous Drain Current (ID): 2A
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Published: 1999
    • Drain to Source Breakdown Voltage: 55V
    • Dual Supply Voltage: 55V
    • Height: 1.4478mm
    • Resistance: 200mOhm
    • Series: HEXFET?
    • Turn-Off Delay Time: 14 ns
    • Nominal Vgs: 2 V
    • Power Dissipation: 2.1W
    • Turn On Delay Time: 5.1 ns
    • Fall Time (Typ): 2.9 ns
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
    • Recovery Time: 61 ns
    • Additional Feature: AVALANCHE RATED, ULTRA LOW RESISTANCE
    • Rds On (Max) @ Id, Vgs: 140m Ω @ 2A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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