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- Manufacturer No：SI2369DS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2369DS-T1-GE3
- SKU：271806
- Description：MOSFET -30V 29mOhm@-10V -7.6A P-CH
User Guide
User Guide
SI2369DS-T1-GE3 Details
MOSFET -30V 29mOhm@-10V -7.6A P-CH
SI2369DS-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- REACH SVHC: No SVHC
- Published: 2015
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Drain Current-Max (Abs) (ID): 7.6A
- Turn On Delay Time: 13 ns
- Height: 1.12mm
- Drain to Source Breakdown Voltage: -30V
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Drain-source On Resistance-Max: 0.029Ohm
- Continuous Drain Current (ID): -5.4A
- Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Terminations: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Configuration: SINGLE WITH BUILT-IN DIODE
- FET Type: P-Channel
- Power Dissipation: 1.25W
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Series: TrenchFET?
- Turn-Off Delay Time: 38 ns
- Threshold Voltage: -1.2V
- Current - Continuous Drain (Id) @ 25°C: 7.6A Tc
- Power Dissipation-Max: 1.25W Ta 2.5W Tc
- Rds On (Max) @ Id, Vgs: 29m Ω @ 5.4A, 10V
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