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- Manufacturer No：SI8800EDB-T2-E1
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI8800EDB-T2-E1
- SKU：271825
- Description：MOSFET 20Volt N-Channel Micro Foot-4
User Guide
User Guide
SI8800EDB-T2-E1 Details
MOSFET 20Volt N-Channel Micro Foot-4
SI8800EDB-T2-E1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 4
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Drain Current-Max (Abs) (ID): 2A
- Operating Temperature: -55°C~150°C TJ
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Factory Lead Time: 30 Weeks
- Continuous Drain Current (ID): 2.8A
- Resistance: 80mOhm
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Fall Time (Typ): 350 ns
- Power Dissipation-Max: 500mW Ta
- Rds On (Max) @ Id, Vgs: 80m Ω @ 1A, 4.5V
- RoHS Status: ROHS3 Compliant
- Number of Channels: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 4
- Pin Count: 4
- Published: 2015
- Element Configuration: Dual
- Drain to Source Breakdown Voltage: 20V
- Terminal Position: BOTTOM
- Terminal Form: BALL
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Subcategory: FET General Purpose Power
- Power Dissipation: 900mW
- Series: TrenchFET?
- Vgs (Max): ±8V
- Drive Voltage (Max Rds On,Min Rds On): 1.5V 4.5V
- Package / Case: 4-XFBGA, CSPBGA
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