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- Manufacturer No：IRS2184STRPBF
- Manufacturer：Infineon
- Category：PMIC - Gate Drivers
- Datasheet：IRS2184STRPBF
- SKU：2718779
- Description：Tape & Reel (TR) IRS2184SPBF Half-Bridge 1996 gate driver 60ns -40C~150C TJ 1.9A 2.3A 625mW
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User Guide
IRS2184STRPBF Details
Tape & Reel (TR) IRS2184SPBF Half-Bridge 1996 gate driver 60ns -40C~150C TJ 1.9A 2.3A 625mW
IRS2184STRPBF Specification Parameters
- Part Status: Active
- Number of Drivers: 2
- Mount: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Factory Lead Time: 12 Weeks
- Technology: CMOS
- Output Voltage: 10V
- Power Supplies: 15V
- Moisture Sensitivity Level (MSL): 2 (1 Year)
- Input Type: Non-Inverting
- Operating Temperature: -40°C~150°C TJ
- Published: 1996
- Turn-Off Delay Time: 40 ns
- Max Power Dissipation: 625mW
- Height: 1.4986mm
- Max Output Current: 2.3A
- Driven Configuration: Half-Bridge
- Nominal Supply Current: 1.6mA
- Gate Type: IGBT, N-Channel MOSFET
- Propagation Delay: 900 ns
- Logic Voltage - VIL, VIH: 0.8V 2.5V
- Rise / Fall Time (Typ): 40ns, 20ns
- Current - Peak Output (Source, Sink): 1.9A 2.3A
- Base Part Number: IRS2184SPBF
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Supply Voltage: 15V
- High Side Voltage - Max (Bootstrap): 600V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Channel Type: Synchronous
- Fall Time (Typ): 35 ns
- Width: 3.9878mm
- Rise Time: 60 ns
- Power Dissipation: 625mW
- Output Current: 1.9A
- Subcategory: MOSFET Drivers
- Turn On Delay Time: 90 ns
- Max Supply Current: 1.6mA
- Voltage - Supply: 10V~20V
- Length: 4.9784mm
- Built-in Protections: TRANSIENT; UNDER VOLTAGE
- Turn Off Time: 0.4 μs
- Turn On Time: 0.9 μs
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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