IRGB6B60KDPBFInfineon
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    • Manufacturer No：
      IRGB6B60KDPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
    • SKU：
      2719821
    • Description：
      IGBT NPT 600 V 13 A 90 W Through Hole TO-220AB
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    • Manufacturer No：
      IRGB6B60KDPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IRGB6B60KDPBF
    • SKU：
      2719821
    • Description：
      IGBT NPT 600 V 13 A 90 W Through Hole TO-220AB

    User Guide

    User Guide

    IRGB6B60KDPBF Details

    IGBT NPT 600 V 13 A 90 W Through Hole TO-220AB

    IRGB6B60KDPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Gate-Emitter Thr Voltage-Max: 5.5V
    • Transistor Element Material: SILICON
    • Input Type: Standard
    • Collector Emitter Breakdown Voltage: 600V
    • Published: 2004
    • Current Rating: 13A
    • Operating Temperature: -55°C~150°C TJ
    • Collector Emitter Voltage (VCEO): 2.2V
    • Polarity/Channel Type: N-CHANNEL
    • Case Connection: COLLECTOR
    • Turn On Time: 45 ns
    • Rise Time: 17 ns
    • Power Dissipation: 90W
    • Current - Collector Pulsed (Icm): 26A
    • Transistor Application: MOTOR CONTROL
    • Width: 4.69mm
    • Switching Energy: 110μJ (on), 135μJ (off)
    • Td (on/off) @ 25°C: 25ns/215ns
    • Test Condition: 400V, 5A, 100 Ω, 15V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Packaging: Tube
    • Number of Pins: 3
    • Factory Lead Time: 16 Weeks
    • Collector Emitter Saturation Voltage: 1.8V
    • Element Configuration: Single
    • Voltage - Rated DC: 600V
    • Gate-Emitter Voltage-Max: 20V
    • Part Status: Last Time Buy
    • Max Collector Current: 13A
    • Package / Case: TO-220-3
    • JEDEC-95 Code: TO-220AB
    • Height: 15.24mm
    • Reverse Recovery Time: 70 ns
    • Subcategory: Insulated Gate BIP Transistors
    • Max Power Dissipation: 90W
    • Fall Time-Max (tf): 27 ns
    • IGBT Type: NPT
    • Length: 10.54mm
    • Turn Off Time-Nom (toff): 258 ns
    • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
    • Gate Charge: 18.2nC
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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