IRL7833PBFInfineon
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    Inventory:94
    • Qty Unit Price price
    • 1 $309.062 $309.062
    • 10 $306.001 $3060.01
    • 100 $302.971 $30297.1
    • 1000 $299.971 $299971
    • 10000 $297 $2970000

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    • Manufacturer No：
      IRL7833PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRL7833PBF
    • SKU：
      2723738
    • Description：
      MOSFET N-CH 30V 150A TO-220AB

    User Guide

    User Guide

    IRL7833PBF Details

    MOSFET N-CH 30V 150A TO-220AB

    IRL7833PBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Element Configuration: Single
    • Voltage - Rated DC: 30V
    • Published: 2004
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Threshold Voltage: 2.3V
    • Subcategory: FET General Purpose Power
    • Rise Time: 50 ns
    • Continuous Drain Current (ID): 150A
    • Drain Current-Max (Abs) (ID): 75A
    • Turn On Delay Time: 18 ns
    • Turn-Off Delay Time: 21 ns
    • Fall Time (Typ): 6.9 ns
    • Vgs(th) (Max) @ Id: 2.3V @ 250μA
    • Power Dissipation-Max: 140W Tc
    • Length: 10.5156mm
    • Resistance: 3.8mOhm
    • Nominal Vgs: 2.3 V
    • Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 15V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Packaging: Tube
    • Number of Pins: 3
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Current Rating: 150A
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Series: HEXFET?
    • Pulsed Drain Current-Max (IDM): 600A
    • Power Dissipation: 140W
    • Recovery Time: 63 ns
    • Width: 4.69mm
    • Height: 8.763mm
    • Current - Continuous Drain (Id) @ 25°C: 150A Tc
    • Avalanche Energy Rating (Eas): 560 mJ
    • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 3.8m Ω @ 38A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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