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  • Manufacturer No:
    IRLR8103VPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRLR8103VPBF
  • SKU:
    2727292
  • Description:
    N-Channel 30 V 91A (Tc) 115W (Tc) Surface Mount D-Pak

IRLR8103VPBF Details

N-Channel 30 V 91A (Tc) 115W (Tc) Surface Mount D-Pak

IRLR8103VPBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Packaging: Tube
  • REACH SVHC: No SVHC
  • Element Configuration: Single
  • Voltage - Rated DC: 30V
  • Dual Supply Voltage: 30V
  • Published: 2004
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Turn On Delay Time: 10 ns
  • Series: HEXFET?
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Nominal Vgs: 3 V
  • Resistance: 9mOhm
  • Lead Free: Contains Lead, Lead Free
  • Rise Time: 9ns
  • Power Dissipation: 89W
  • Continuous Drain Current (ID): 91A
  • Rds On (Max) @ Id, Vgs: 9m Ω @ 15A, 10V
  • Current - Continuous Drain (Id) @ 25°C: 91A Tc
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Contact Plating: Tin
  • Number of Pins: 3
  • Threshold Voltage: 3V
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Breakdown Voltage: 30V
  • Part Status: Discontinued
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Width: 6.22mm
  • Fall Time (Typ): 18 ns
  • Turn-Off Delay Time: 24 ns
  • Height: 2.3876mm
  • Length: 6.7056mm
  • Current Rating: 89A
  • Power Dissipation-Max: 115W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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