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  • Manufacturer No:
    IRF8707PBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2727685
  • Description:
    In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon
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  • Manufacturer No:
    IRF8707PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF8707PBF
  • SKU:
    2727685
  • Description:
    In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon

IRF8707PBF Details

In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon

IRF8707PBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Published: 2007
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • Dual Supply Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Height: 1.5mm
  • Subcategory: FET General Purpose Power
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Width: 3.9878mm
  • Recovery Time: 18 ns
  • Fall Time (Typ): 4.4 ns
  • Turn On Delay Time: 6.7 ns
  • Nominal Vgs: 1.8 V
  • Vgs(th) (Max) @ Id: 2.35V @ 25μA
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
  • Resistance: 11.9mOhm
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Number of Terminations: 8
  • Packaging: Tube
  • Termination: SMD/SMT
  • Threshold Voltage: 1.8V
  • Transistor Element Material: SILICON
  • Length: 5mm
  • Drain to Source Breakdown Voltage: 30V
  • Part Status: Discontinued
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Power Dissipation: 2.5W
  • Continuous Drain Current (ID): 11A
  • Series: HEXFET?
  • Rise Time: 7.9 ns
  • Power Dissipation-Max: 2.5W Ta
  • Turn-Off Delay Time: 7.3 ns
  • Current - Continuous Drain (Id) @ 25°C: 11A Ta
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Avalanche Energy Rating (Eas): 53 mJ
  • Rds On (Max) @ Id, Vgs: 11.9m Ω @ 11A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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