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  • Manufacturer No:
    IRFB3307PBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2727708
  • Description:
    MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 5 Milliohms; ID 130A; TO-220AB; PD 250W; gFS 98S
  • Quantity:
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Inventory:459
  • Qty Unit Price price
  • 1 $407.919 $407.919
  • 10 $403.88 $4038.8
  • 100 $399.881 $39988.1
  • 1000 $395.921 $395921
  • 10000 $392 $3920000

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  • Manufacturer No:
    IRFB3307PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFB3307PBF
  • SKU:
    2727708
  • Description:
    MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 5 Milliohms; ID 130A; TO-220AB; PD 250W; gFS 98S

IRFB3307PBF Details

MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 5 Milliohms; ID 130A; TO-220AB; PD 250W; gFS 98S

IRFB3307PBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 75V
  • Dual Supply Voltage: 75V
  • Published: 2004
  • Power Dissipation: 200W
  • Threshold Voltage: 4V
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • Series: HEXFET?
  • Rise Time: 120 ns
  • Height: 4.82mm
  • Current Rating: 130A
  • Turn-Off Delay Time: 51 ns
  • Power Dissipation-Max: 200W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 130A Tc
  • Avalanche Energy Rating (Eas): 270 mJ
  • Rds On (Max) @ Id, Vgs: 6.3m Ω @ 75A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Lead Pitch: 2.54mm
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 75V
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Drain Current-Max (Abs) (ID): 75A
  • Width: 4.826mm
  • Turn On Delay Time: 26 ns
  • Nominal Vgs: 4 V
  • Continuous Drain Current (ID): 130A
  • Fall Time (Typ): 63 ns
  • Vgs(th) (Max) @ Id: 4V @ 150μA
  • Length: 10.6426mm
  • Resistance: 6.3mOhm
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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