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Inventory:13708
  • Qty Unit Price price
  • 1 $157.134 $157.134
  • 10 $155.578 $1555.78
  • 100 $154.037 $15403.7
  • 1000 $152.511 $152511
  • 10000 $151 $1510000

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  • Manufacturer No:
    IRFR220NTRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR220NTRPBF
  • SKU:
    2728049
  • Description:
    MOSFET N-CH 200V 5A DPAK

IRFR220NTRPBF Details

MOSFET N-CH 200V 5A DPAK

IRFR220NTRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Factory Lead Time: 12 Weeks
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Voltage - Rated DC: 200V
  • Dual Supply Voltage: 200V
  • Max Junction Temperature (Tj): 175°C
  • Drain Current-Max (Abs) (ID): 5A
  • Switching Current: 5A
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Pulsed Drain Current-Max (IDM): 20A
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Subcategory: FET General Purpose Power
  • Turn-Off Delay Time: 20 ns
  • Fall Time (Typ): 12 ns
  • Resistance: 600mOhm
  • Rise Time: 11 ns
  • Recovery Time: 140 ns
  • Length: 6.7056mm
  • Height: 2.52mm
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Avalanche Energy Rating (Eas): 46 mJ
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Pins: 3
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Breakdown Voltage: 200V
  • Time@Peak Reflow Temperature-Max (s): 30
  • Current Rating: 5A
  • Continuous Drain Current (ID): 5A
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Published: 2004
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Series: HEXFET?
  • Width: 6.22mm
  • JEDEC-95 Code: TO-252AA
  • Nominal Vgs: 4 V
  • Turn On Delay Time: 6.4 ns
  • Power Dissipation: 43W
  • Current - Continuous Drain (Id) @ 25°C: 5A Tc
  • Power Dissipation-Max: 43W Tc
  • Rds On (Max) @ Id, Vgs: 600m Ω @ 2.9A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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