IRFR1018EPBFInfineon
    Add to like
    Add to project list
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRFR1018EPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFR1018EPBF
    • SKU：
      2728155
    • Description：
      MOSFET N-CH 60V 79A DPAK

    User Guide

    User Guide

    IRFR1018EPBF Details

    MOSFET N-CH 60V 79A DPAK

    IRFR1018EPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 60V
    • Published: 2008
    • Transistor Element Material: SILICON
    • Factory Lead Time: 15 Weeks
    • Part Status: Discontinued
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Rise Time: 35 ns
    • Width: 6.22mm
    • Turn-Off Delay Time: 55 ns
    • Power Dissipation: 110W
    • Length: 6.7056mm
    • Recovery Time: 39 ns
    • Power Dissipation-Max: 110W Tc
    • Vgs(th) (Max) @ Id: 4V @ 100μA
    • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
    • Avalanche Energy Rating (Eas): 88 mJ
    • Rds On (Max) @ Id, Vgs: 8.4m Ω @ 47A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Series: HEXFET?
    • Turn On Delay Time: 13 ns
    • JEDEC-95 Code: TO-252AA
    • Height: 2.3876mm
    • Drain Current-Max (Abs) (ID): 56A
    • Fall Time (Typ): 46 ns
    • Continuous Drain Current (ID): 79A
    • Current - Continuous Drain (Id) @ 25°C: 56A Tc
    • Drain-source On Resistance-Max: 0.0084Ohm
    • Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V
    Search for similar products

    IRFR1018EPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRFR1018EPBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via