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- Manufacturer No：IRF4905PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF4905PBF
- SKU：2728410
- Description：MOSFET P-CH 55V 74A TO-220AB
User Guide
User Guide
IRF4905PBF Details
MOSFET P-CH 55V 74A TO-220AB
IRF4905PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Power Dissipation: 200W
- Published: 1997
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- Case Connection: DRAIN
- FET Type: P-Channel
- Peak Reflow Temperature (Cel): 250
- Turn On Delay Time: 18 ns
- Recovery Time: 130 ns
- Drain Current-Max (Abs) (ID): 64A
- Pulsed Drain Current-Max (IDM): 260A
- Width: 4.69mm
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Fall Time (Typ): 96 ns
- Length: 10.5156mm
- Voltage - Rated DC: -55V
- Nominal Vgs: -4 V
- Current - Continuous Drain (Id) @ 25°C: 74A Tc
- Current Rating: -74A
- Rds On (Max) @ Id, Vgs: 20m Ω @ 38A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Lead Pitch: 2.54mm
- Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
- Max Junction Temperature (Tj): 175°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Voltage (Vdss): 55V
- Subcategory: Other Transistors
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Series: HEXFET?
- Height: 19.8mm
- Lead Free: Contains Lead, Lead Free
- Drain-source On Resistance-Max: 0.02Ohm
- Threshold Voltage: -4V
- Power Dissipation-Max: 200W Tc
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Turn-Off Delay Time: 61 ns
- Drain to Source Breakdown Voltage: -55V
- Dual Supply Voltage: -55V
- Rise Time: 99 ns
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
- Continuous Drain Current (ID): -74A
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