IRF7343TRPBFInfineon
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    Inventory:7783
    • Qty Unit Price price
    • 1 $1642.076 $1642.076
    • 10 $1625.817 $16258.17
    • 100 $1609.719 $160971.9
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    • Manufacturer No：
      IRF7343TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF7343TRPBF
    • SKU：
      2728789
    • Description：
      MOSFET N/P-CH 55V 8-SOIC

    User Guide

    User Guide

    IRF7343TRPBF Details

    MOSFET N/P-CH 55V 8-SOIC

    IRF7343TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Factory Lead Time: 12 Weeks
    • REACH SVHC: No SVHC
    • Transistor Element Material: SILICON
    • Max Power Dissipation: 2W
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Transistor Application: SWITCHING
    • Drain to Source Breakdown Voltage: 55V
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Width: 3.9878mm
    • Fall Time (Typ): 22 ns
    • Current Rating: 4.7A
    • FET Type: N and P-Channel
    • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
    • Nominal Vgs: 1 V
    • Turn On Delay Time: 8.3 ns
    • Additional Feature: AVALANCHE RATED, ULTRA LOW RESISTANCE
    • Rds On (Max) @ Id, Vgs: 50m Ω @ 4.7A, 10V
    • Base Part Number: IRF7343PBF
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Max Junction Temperature (Tj): 150°C
    • FET Feature: Standard
    • Power Dissipation: 2W
    • Published: 2004
    • Threshold Voltage: 1V
    • Height: 1.75mm
    • Operating Mode: ENHANCEMENT MODE
    • Rise Time: 10 ns
    • Resistance: 50mOhm
    • Series: HEXFET?
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Continuous Drain Current (ID): 4.7A
    • Turn-Off Delay Time: 43 ns
    • Length: 4.9784mm
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Row Spacing: 6.3 mm
    • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
    • Current - Continuous Drain (Id) @ 25°C: 4.7A 3.4A
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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