IRLR3105PBFInfineon
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    • Manufacturer No：
      IRLR3105PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLR3105PBF
    • SKU：
      2728808
    • Description：
      MOSFET N-CH 55V 25A DPAK

    User Guide

    User Guide

    IRLR3105PBF Details

    MOSFET N-CH 55V 25A DPAK

    IRLR3105PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2008
    • Element Configuration: Single
    • Part Status: Discontinued
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Voltage - Rated DC: 55V
    • Current Rating: 25A
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Turn On Delay Time: 8 ns
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Nominal Vgs: 3 V
    • Drive Voltage (Max Rds On,Min Rds On): 5V 10V
    • Resistance: 37mOhm
    • Current - Continuous Drain (Id) @ 25°C: 25A Tc
    • Width: 6.223mm
    • Power Dissipation-Max: 57W Tc
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Threshold Voltage: 3V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 16V
    • Height: 2.39mm
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Drain to Source Breakdown Voltage: 55V
    • Dual Supply Voltage: 55V
    • Continuous Drain Current (ID): 25A
    • Case Connection: DRAIN
    • Length: 6.73mm
    • Turn-Off Delay Time: 25 ns
    • Series: HEXFET?
    • JEDEC-95 Code: TO-252AA
    • Vgs (Max): ±16V
    • Fall Time (Typ): 37 ns
    • Rise Time: 57 ns
    • Power Dissipation: 57W
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
    • Rds On (Max) @ Id, Vgs: 37m Ω @ 15A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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