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- Manufacturer No：IRF530NSTRLPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF530NSTRLPBF
- SKU：2728879
- Description：MOSFET N-CH 100V 17A D2PAK
User Guide
User Guide
IRF530NSTRLPBF Details
MOSFET N-CH 100V 17A D2PAK
IRF530NSTRLPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Pins: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Published: 2004
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ): 25 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Current Rating: 17A
- Width: 9.65mm
- Rise Time: 22 ns
- Recovery Time: 140 ns
- Lead Free: Contains Lead, Lead Free
- Power Dissipation: 3.8W
- Current - Continuous Drain (Id) @ 25°C: 17A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
- Rds On (Max) @ Id, Vgs: 90m Ω @ 9A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Voltage - Rated DC: 100V
- Dual Supply Voltage: 100V
- Max Junction Temperature (Tj): 175°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Pulsed Drain Current-Max (IDM): 60A
- Turn-Off Delay Time: 35 ns
- Series: HEXFET?
- Continuous Drain Current (ID): 17A
- Resistance: 90mOhm
- Length: 10.668mm
- Nominal Vgs: 4 V
- Turn On Delay Time: 9.2 ns
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Height: 5.084mm
- Power Dissipation-Max: 3.8W Ta 70W Tc
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