Add to like
Add to project list
Inventory:3335
  • Qty Unit Price price
  • 1 $6060.48 $6060.48
  • 10 $6000.475 $60004.75
  • 100 $5941.064 $594106.4
  • 1000 $5882.241 $5882241
  • 10000 $5824 $58240000

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    IRFB4332PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFB4332PBF
  • SKU:
    2729509
  • Description:
    MOSFET N-CH 250V 60A TO-220AB

IRFB4332PBF Details

MOSFET N-CH 250V 60A TO-220AB

IRFB4332PBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 250V
  • Max Junction Temperature (Tj): 175°C
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Current Rating: 60A
  • Vgs (Max): ±30V
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Width: 4.82mm
  • Resistance: 33mOhm
  • Length: 10.66mm
  • Power Dissipation: 390W
  • Recovery Time: 290 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 25V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • Number of Channels: 1
  • Radiation Hardening: No
  • Threshold Voltage: 5V
  • Packaging: Tube
  • Number of Pins: 3
  • Voltage - Rated DC: 250V
  • Dual Supply Voltage: 250V
  • Published: 2008
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • Continuous Drain Current (ID): 60A
  • Series: HEXFET?
  • Height: 19.8mm
  • Operating Temperature: -40°C~175°C TJ
  • Nominal Vgs: 5 V
  • Current - Continuous Drain (Id) @ 25°C: 60A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Power Dissipation-Max: 390W Tc
  • Rds On (Max) @ Id, Vgs: 33m Ω @ 35A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via