IRF9520NSPBFInfineon
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    • Manufacturer No：
      IRF9520NSPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF9520NSPBF
    • SKU：
      2729591
    • Description：
      MOSFET P-CH 100V 6.8A D2PAK

    User Guide

    User Guide

    IRF9520NSPBF Details

    MOSFET P-CH 100V 6.8A D2PAK

    IRF9520NSPBF Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Subcategory: Other Transistors
    • Case Connection: DRAIN
    • FET Type: P-Channel
    • Recovery Time: 150 ns
    • Width: 9.65mm
    • Turn On Delay Time: 14 ns
    • Turn-Off Delay Time: 28 ns
    • Fall Time (Typ): 31 ns
    • Rise Time: 47 ns
    • Resistance: 480mOhm
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
    • Current - Continuous Drain (Id) @ 25°C: 6.8A Tc
    • Continuous Drain Current (ID): -6.8A
    • Number of Terminations: 2
    • Mount: Surface Mount
    • RoHS Status: RoHS Compliant
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Voltage (Vdss): 100V
    • Factory Lead Time: 9 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Published: 1998
    • JESD-30 Code: R-PSSO-G2
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: HEXFET?
    • Height: 4.826mm
    • Pulsed Drain Current-Max (IDM): 27A
    • Length: 10.668mm
    • Drain to Source Breakdown Voltage: -100V
    • Power Dissipation: 3.8W
    • Threshold Voltage: -4V
    • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
    • Nominal Vgs: -4 V
    • Power Dissipation-Max: 3.8W Ta 48W Tc
    • Rds On (Max) @ Id, Vgs: 480m Ω @ 4A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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