IRF630NPBFInfineon
    Add to like
    Add to project list
    Inventory:7997
    • Qty Unit Price price
    • 1 $0.94 $0.94
    • 10 $0.93 $9.3
    • 100 $0.92 $92
    • 1000 $0.91 $910
    • 10000 $0.9 $9000

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRF630NPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF630NPBF
    • SKU：
      2729629
    • Description：
      MOSFET N-CH 200V 9.3A TO-220AB

    User Guide

    User Guide

    IRF630NPBF Details

    MOSFET N-CH 200V 9.3A TO-220AB

    IRF630NPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 200V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Terminal Finish: MATTE TIN OVER NICKEL
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 15 ns
    • Peak Reflow Temperature (Cel): 250
    • Series: HEXFET?
    • Turn-Off Delay Time: 27 ns
    • Continuous Drain Current (ID): 9.3A
    • Turn On Delay Time: 7.9 ns
    • Length: 10.54mm
    • Width: 4.69mm
    • Power Dissipation: 82W
    • Avalanche Energy Rating (Eas): 94 mJ
    • Power Dissipation-Max: 82W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Packaging: Tube
    • Number of Pins: 3
    • Voltage - Rated DC: 200V
    • Dual Supply Voltage: 200V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Published: 2004
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Resistance: 300mOhm
    • Rise Time: 14 ns
    • Current Rating: 9.3A
    • Nominal Vgs: 4 V
    • Lead Free: Contains Lead, Lead Free
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    • Height: 8.77mm
    • Current - Continuous Drain (Id) @ 25°C: 9.3A Tc
    • Recovery Time: 176 ns
    • Rds On (Max) @ Id, Vgs: 300m Ω @ 5.4A, 10V
    Search for similar products

    IRF630NPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRF630NPBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via