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IRFP4232PBF123
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IRFP4232PBF
  • Manufacturer No:
    IRFP4232PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFP4232PBF
  • SKU:
    2730124
  • Description:
    MOSFET N-CH 250V 60A TO-247AC

IRFP4232PBF Details

MOSFET N-CH 250V 60A TO-247AC

IRFP4232PBF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • RoHS Status: RoHS Compliant
  • Lead Free: Lead Free
  • Threshold Voltage: 5V
  • Min Operating Temperature: -40°C
  • Voltage - Rated DC: 250V
  • Drain to Source Breakdown Voltage: 250V
  • Published: 2007
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 30V
  • Technology: MOSFET (Metal Oxide)
  • Current Rating: 60A
  • Package / Case: TO-247-3
  • Length: 15.87mm
  • Supplier Device Package: TO-247AC
  • Nominal Vgs: 5 V
  • Width: 5.3086mm
  • Current - Continuous Drain (Id) @ 25°C: 60A Tc
  • Turn-Off Delay Time: 64 ns
  • Power Dissipation-Max: 430W Tc
  • Drain to Source Resistance: 35.7mOhm
  • Packaging: Bulk
  • Mount: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drain to Source Voltage (Vdss): 250V
  • Dual Supply Voltage: 250V
  • Max Operating Temperature: 175°C
  • Element Configuration: Single
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Continuous Drain Current (ID): 60A
  • Series: HEXFET?
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Operating Temperature: -40°C~175°C TJ
  • Height: 20.7mm
  • Turn On Delay Time: 37 ns
  • Power Dissipation: 430W
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Resistance: 35.7mOhm
  • Input Capacitance (Ciss) (Max) @ Vds: 7290pF @ 25V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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