IRF7301PBFInfineon
    Add to like
    Add to project list
    • Manufacturer No：
      IRF7301PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
    • SKU：
      2730227
    • Description：
      Mosfet Array 2 N-Channel (Dual) 20V 5.2A 2W Surface Mount 8-SO
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      IRF7301PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      IRF7301PBF
    • SKU：
      2730227
    • Description：
      Mosfet Array 2 N-Channel (Dual) 20V 5.2A 2W Surface Mount 8-SO

    User Guide

    User Guide

    IRF7301PBF Details

    Mosfet Array 2 N-Channel (Dual) 20V 5.2A 2W Surface Mount 8-SO

    IRF7301PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 20V
    • Part Status: Discontinued
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Published: 1996
    • Series: HEXFET?
    • FET Type: 2 N-Channel (Dual)
    • Current - Continuous Drain (Id) @ 25°C: 5.2A
    • Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    • JEDEC-95 Code: MS-012AA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 50m Ω @ 2.6A, 4.5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Surface Mount: YES
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Terminations: 8
    • Qualification Status: Not Qualified
    • Terminal Finish: Matte Tin (Sn)
    • Power - Max: 2W
    • DS Breakdown Voltage-Min: 20V
    • Operating Temperature: -55°C~150°C TJ
    • Transistor Application: SWITCHING
    • JESD-30 Code: R-PDSO-G8
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Power Dissipation-Max (Abs): 1.4W
    • FET Feature: Logic Level Gate
    • Drain Current-Max (Abs) (ID): 5.2A
    • Pulsed Drain Current-Max (IDM): 21A
    • Drain-source On Resistance-Max: 0.05Ohm
    • Vgs(th) (Max) @ Id: 700mV @ 250μA
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
    • Base Part Number: IRF7301PBF
    Search for similar products

    IRF7301PBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRF7301PBF

    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via