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- Manufacturer No：IRF7470TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF7470TRPBF
- SKU：2730233
- Description：MOSFET N-CH 40V 10A 8-SOIC
User Guide
User Guide
IRF7470TRPBF Details
MOSFET N-CH 40V 10A 8-SOIC
IRF7470TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 40V
- Published: 2003
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Pulsed Drain Current-Max (IDM): 85A
- JEDEC-95 Code: MS-012AA
- Current - Continuous Drain (Id) @ 25°C: 10A Ta
- Drive Voltage (Max Rds On,Min Rds On): 2.8V 10V
- Rds On (Max) @ Id, Vgs: 13m Ω @ 10A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Number of Terminations: 8
- Factory Lead Time: 12 Weeks
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Drain Current-Max (Abs) (ID): 10A
- DS Breakdown Voltage-Min: 40V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- JESD-30 Code: R-PDSO-G8
- Series: HEXFET?
- Vgs (Max): ±12V
- Power Dissipation-Max: 2.5W Ta
- Drain-source On Resistance-Max: 0.013Ohm
- Avalanche Energy Rating (Eas): 300 mJ
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 20V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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