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Inventory:5003
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  • Manufacturer No:
    IRF7820TRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF7820TRPBF
  • SKU:
    2730608
  • Description:
    MOSFET N CH 200V 3.7A 8-SO

IRF7820TRPBF Details

MOSFET N CH 200V 3.7A 8-SO

IRF7820TRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Published: 2012
  • DS Breakdown Voltage-Min: 200V
  • Transistor Element Material: SILICON
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Power Dissipation: 2.5W
  • Series: HEXFET?
  • Continuous Drain Current (ID): 3.7A
  • Power Dissipation-Max: 2.5W Ta
  • Vgs(th) (Max) @ Id: 5V @ 100μA
  • Rise Time: 3.2ns
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Number of Terminations: 8
  • Factory Lead Time: 12 Weeks
  • REACH SVHC: No SVHC
  • Drain to Source Voltage (Vdss): 200V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • Fall Time (Typ): 12 ns
  • Turn-Off Delay Time: 14 ns
  • Nominal Vgs: 4 V
  • Turn On Delay Time: 7.1 ns
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A Ta
  • Rds On (Max) @ Id, Vgs: 78m Ω @ 2.2A, 10V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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