IRFS4229PBFInfineon
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    • Manufacturer No：
      IRFS4229PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFS4229PBF
    • SKU：
      2730609
    • Description：
      N-Channel 250 V 45A (Tc) 330W (Tc) Surface Mount D2PAK

    User Guide

    User Guide

    IRFS4229PBF Details

    N-Channel 250 V 45A (Tc) 330W (Tc) Surface Mount D2PAK

    IRFS4229PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Lead Free: Lead Free
    • Packaging: Tube
    • Termination: SMD/SMT
    • Drain to Source Breakdown Voltage: 250V
    • Published: 2008
    • Element Configuration: Single
    • Part Status: Discontinued
    • Technology: MOSFET (Metal Oxide)
    • Turn-Off Delay Time: 30 ns
    • Height: 4.572mm
    • Length: 10.67mm
    • Width: 9.65mm
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Nominal Vgs: 5 V
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 45A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Threshold Voltage: 5V
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Dual Supply Voltage: 250V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Gate to Source Voltage (Vgs): 30V
    • FET Type: N-Channel
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Vgs (Max): ±30V
    • Continuous Drain Current (ID): 45A
    • Series: HEXFET?
    • Turn On Delay Time: 18 ns
    • Operating Temperature: -40°C~175°C TJ
    • Power Dissipation: 330W
    • Recovery Time: 290 ns
    • Power Dissipation-Max: 330W Tc
    • Rds On (Max) @ Id, Vgs: 48m Ω @ 26A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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