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  • Manufacturer No:
    IRF7702TRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF7702TRPBF
  • SKU:
    2730671
  • Description:
    MOSFET P-CH 12V 8A 8-TSSOP

IRF7702TRPBF Details

MOSFET P-CH 12V 8A 8-TSSOP

IRF7702TRPBF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Number of Pins: 8
  • Max Operating Temperature: 150°C
  • Operating Temperature: -55°C~150°C TJ
  • Power Dissipation: 1.5W
  • Drain to Source Breakdown Voltage: -12V
  • Length: 3.0988mm
  • Width: 4.4958mm
  • Fall Time (Typ): 250 ns
  • Supplier Device Package: 8-TSSOP
  • Resistance: 14mOhm
  • Height: 1.0414mm
  • Vgs(th) (Max) @ Id: 1.2V @ 250μA
  • Turn-Off Delay Time: 320 ns
  • Continuous Drain Current (ID): -8A
  • Power Dissipation-Max: 1.5W Tc
  • Input Capacitance: 3.47nF
  • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 10V
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • RoHS Status: RoHS Compliant
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Drain to Source Voltage (Vdss): 12V
  • Published: 2006
  • Technology: MOSFET (Metal Oxide)
  • Gate to Source Voltage (Vgs): 8V
  • FET Type: P-Channel
  • Package / Case: 8-TSSOP (0.173, 4.40mm Width)
  • Series: HEXFET?
  • Turn On Delay Time: 16 ns
  • Vgs (Max): ±8V
  • Drain to Source Resistance: 14mOhm
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 8A Tc
  • Rise Time: 21ns
  • Rds On Max: 14 mΩ
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 4.5V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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