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- Manufacturer No：IRLML5103TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLML5103TRPBF
- SKU：2731488
- Description：INFINEON IRLML5103PBF MOSFET Transistor, P Channel, 610 mA, -30 V, 600 mohm, -10 V, -1 V
User Guide
User Guide
IRLML5103TRPBF Details
INFINEON IRLML5103PBF MOSFET Transistor, P Channel, 610 mA, -30 V, 600 mohm, -10 V, -1 V
IRLML5103TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Single
- Min Breakdown Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Subcategory: Other Transistors
- Turn On Delay Time: 10 ns
- FET Type: P-Channel
- Series: HEXFET?
- Fall Time (Typ): 16 ns
- Voltage - Rated DC: -30V
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Threshold Voltage: -1V
- Length: 3.0226mm
- Drain Current-Max (Abs) (ID): 0.76A
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
- Rds On (Max) @ Id, Vgs: 600m Ω @ 600mA, 10V
- Current - Continuous Drain (Id) @ 25°C: 760mA Ta
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- Number of Pins: 3
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Published: 2004
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Width: 1.397mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Height: 1.016mm
- Resistance: 600mOhm
- Drain to Source Breakdown Voltage: -30V
- Dual Supply Voltage: -30V
- Turn-Off Delay Time: 23 ns
- Power Dissipation: 540mW
- Rise Time: 8.2 ns
- Nominal Vgs: -1 V
- Power Dissipation-Max: 540mW Ta
- Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
- Continuous Drain Current (ID): -760mA
- Current Rating: -610mA
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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