IRLS4030TRLPBFInfineon
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    Inventory:1727
    • Qty Unit Price price
    • 1 $4.018 $4.018
    • 10 $3.978 $39.78
    • 100 $3.938 $393.8
    • 1000 $3.899 $3899
    • 10000 $3.86 $38600

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    • Manufacturer No：
      IRLS4030TRLPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLS4030TRLPBF
    • SKU：
      2734142
    • Description：
      MOSFET N-CH 100V 180A D2PAK

    User Guide

    User Guide

    IRLS4030TRLPBF Details

    MOSFET N-CH 100V 180A D2PAK

    IRLS4030TRLPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Factory Lead Time: 12 Weeks
    • Terminal Form: GULL WING
    • Drain to Source Breakdown Voltage: 100V
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Series: HEXFET?
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Turn-Off Delay Time: 110 ns
    • Length: 10.668mm
    • Fall Time (Typ): 170 ns
    • Rise Time: 330 ns
    • Current - Continuous Drain (Id) @ 25°C: 180A Tc
    • Power Dissipation-Max: 370W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 3
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Published: 2009
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 16V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • JESD-30 Code: R-PSSO-G2
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Height: 4.572mm
    • Width: 9.65mm
    • Continuous Drain Current (ID): 180A
    • Vgs (Max): ±16V
    • Nominal Vgs: 2.5 V
    • Resistance: 3.9MOhm
    • Turn On Delay Time: 74 ns
    • Power Dissipation: 370W
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 4.3m Ω @ 110A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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