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  • Manufacturer No:
    IRLL014NTR
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRLL014NTR
  • SKU:
    2734624
  • Description:
    MOSFET N-CH 55V 2A SOT223

IRLL014NTR Details

MOSFET N-CH 55V 2A SOT223

IRLL014NTR Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 4
  • Terminal Form: GULL WING
  • Transistor Element Material: SILICON
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Published: 1999
  • Pulsed Drain Current-Max (IDM): 16A
  • DS Breakdown Voltage-Min: 55V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • JESD-30 Code: R-PDSO-G4
  • Package / Case: TO-261-4, TO-261AA
  • Vgs (Max): ±16V
  • Power Dissipation-Max: 1W Ta
  • Drain-source On Resistance-Max: 0.14Ohm
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Rds On (Max) @ Id, Vgs: 140m Ω @ 2A, 10V
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Position: DUAL
  • Qualification Status: Not Qualified
  • Terminal Finish: Matte Tin (Sn)
  • Drain Current-Max (Abs) (ID): 2A
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Drain to Source Voltage (Vdss): 55V
  • Additional Feature: HIGH RELIABILITY
  • Case Connection: DRAIN
  • Series: HEXFET?
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Drive Voltage (Max Rds On,Min Rds On): 4V 10V
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 2A Ta
  • Avalanche Energy Rating (Eas): 32 mJ

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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