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  • Manufacturer No:
    IRLB8748PBF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    2736283
  • Description:
    Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3
  • Quantity:
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Inventory:4194
  • Qty Unit Price price
  • 1 $1526.568 $1526.568
  • 10 $1511.453 $15114.53
  • 100 $1496.488 $149648.8
  • 1000 $1481.671 $1481671
  • 10000 $1467 $14670000

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  • Manufacturer No:
    IRLB8748PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRLB8748PBF
  • SKU:
    2736283
  • Description:
    Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3

IRLB8748PBF Details

Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3

IRLB8748PBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Elements: 1
  • Lead Free: Lead Free
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Dual Supply Voltage: 30V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Height: 16.51mm
  • Width: 4.826mm
  • Turn-Off Delay Time: 16 ns
  • Fall Time (Typ): 34 ns
  • Drain Current-Max (Abs) (ID): 78A
  • Rise Time: 96 ns
  • Resistance: 4.8mOhm
  • Vgs(th) (Max) @ Id: 2.35V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds: 2139pF @ 15V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Published: 2009
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 30V
  • Power Dissipation: 75W
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • Recovery Time: 35 ns
  • Series: HEXFET?
  • Turn On Delay Time: 14 ns
  • Length: 10.668mm
  • Nominal Vgs: 1.8 V
  • Power Dissipation-Max: 75W Tc
  • Continuous Drain Current (ID): 92A
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 78A Tc

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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