Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:204554
- Qty Unit Price price
- 1 $872.028 $872.028
- 10 $863.394 $8633.94
- 100 $854.845 $85484.5
- 1000 $846.381 $846381
- 10000 $838 $8380000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI7617DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7617DN-T1-GE3
- SKU：274548
- Description：MOSFET 30V 35A 52W 12.3mohm @ 10V
User Guide
User Guide
SI7617DN-T1-GE3 Details
MOSFET 30V 35A 52W 12.3mohm @ 10V
SI7617DN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- Published: 2013
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Max Junction Temperature (Tj): 150°C
- Gate to Source Voltage (Vgs): 25V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Terminal Form: C BEND
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn On Delay Time: 11 ns
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Threshold Voltage: -2.5V
- Drain to Source Breakdown Voltage: -30V
- Vgs (Max): ±25V
- Power Dissipation: 3.7W
- Current - Continuous Drain (Id) @ 25°C: 35A Tc
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Avalanche Energy Rating (Eas): 42 mJ
- Continuous Drain Current (ID): -35A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 40
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Pulsed Drain Current-Max (IDM): 60A
- FET Type: P-Channel
- Fall Time (Typ): 11 ns
- Height: 1.12mm
- Series: TrenchFET?
- Turn-Off Delay Time: 32 ns
- Rise Time: 43 ns
- Package / Case: PowerPAK? 1212-8
- JESD-30 Code: S-XDSO-C5
- Power Dissipation-Max: 3.7W Ta 52W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
- Rds On (Max) @ Id, Vgs: 12.3m Ω @ 13.9A, 10V
Search for similar products
SI7617DN-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI7617DN-T1-GE3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
