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  • Manufacturer No:
    IRL3103S
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRL3103S
  • SKU:
    2749614
  • Description:
    MOSFET N-CH 30V 64A D2PAK

IRL3103S Details

MOSFET N-CH 30V 64A D2PAK

IRL3103S Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Packaging: Tube
  • JESD-609 Code: e0
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 30V
  • Published: 2002
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Peak Reflow Temperature (Cel): 225
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Series: HEXFET?
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Pulsed Drain Current-Max (IDM): 220A
  • Drain-source On Resistance-Max: 0.012Ohm
  • Avalanche Energy Rating (Eas): 130 mJ
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 12m Ω @ 34A, 10V
  • Number of Terminations: 2
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • Part Status: Obsolete
  • Qualification Status: Not Qualified
  • Terminal Form: GULL WING
  • Terminal Finish: Tin/Lead (Sn/Pb)
  • Terminal Position: SINGLE
  • DS Breakdown Voltage-Min: 30V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Case Connection: DRAIN
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Additional Feature: AVALANCHE RATED
  • Vgs (Max): ±16V
  • Drain Current-Max (Abs) (ID): 64A
  • Power Dissipation-Max: 94W Tc
  • Current - Continuous Drain (Id) @ 25°C: 64A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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