IRLR7821PBFInfineon
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    • Manufacturer No：
      IRLR7821PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLR7821PBF
    • SKU：
      2750463
    • Description：
      MOSFET N-CH 30V 65A DPAK

    User Guide

    User Guide

    IRLR7821PBF Details

    MOSFET N-CH 30V 65A DPAK

    IRLR7821PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Packaging: Tube
    • REACH SVHC: No SVHC
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 30V
    • Part Status: Discontinued
    • Resistance: 10mOhm
    • Threshold Voltage: 1V
    • Technology: MOSFET (Metal Oxide)
    • Vgs (Max): ±20V
    • Turn-Off Delay Time: 10 ns
    • Series: HEXFET?
    • Turn On Delay Time: 11 ns
    • Continuous Drain Current (ID): 65A
    • Length: 6.7056mm
    • Rise Time: 4.2ns
    • Height: 2.26mm
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Number of Pins: 3
    • Element Configuration: Single
    • Voltage - Rated DC: 30V
    • Dual Supply Voltage: 30V
    • Power Dissipation: 75W
    • Published: 2004
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Width: 6.22mm
    • Current Rating: 65A
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Fall Time (Typ): 3.2 ns
    • Nominal Vgs: 1 V
    • Power Dissipation-Max: 75W Tc
    • Current - Continuous Drain (Id) @ 25°C: 65A Tc
    • Rds On (Max) @ Id, Vgs: 10m Ω @ 15A, 10V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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