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- Manufacturer No：SIA417DJ-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIA417DJ-T1-GE3
- SKU：278119
- Description：MOSFET 8.0V 12A 19W 23mohm @ 4.5V
User Guide
User Guide
SIA417DJ-T1-GE3 Details
MOSFET 8.0V 12A 19W 23mohm @ 4.5V
SIA417DJ-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Gate to Source Voltage (Vgs): 5V
- Number of Pins: 6
- Peak Reflow Temperature (Cel): 260
- Published: 2009
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM): 30A
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Turn On Delay Time: 15 ns
- Power Dissipation: 3.5W
- Rise Time: 25ns
- Series: TrenchFET?
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Resistance: 23mOhm
- Drive Voltage (Max Rds On,Min Rds On): 1.2V 4.5V
- Package / Case: PowerPAK? SC-70-6
- Continuous Drain Current (ID): -12A
- JESD-30 Code: S-XDSO-N3
- Rds On (Max) @ Id, Vgs: 23m Ω @ 7A, 4.5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Terminations: 3
- Pin Count: 6
- Time@Peak Reflow Temperature-Max (s): 40
- REACH SVHC: Unknown
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Drain to Source Breakdown Voltage: 8V
- Case Connection: DRAIN
- FET Type: P-Channel
- Fall Time (Typ): 45 ns
- Vgs (Max): ±5V
- Turn-Off Delay Time: 80 ns
- Threshold Voltage: -1V
- Current - Continuous Drain (Id) @ 25°C: 12A Tc
- Nominal Vgs: -1 V
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
- Power Dissipation-Max: 3.5W Ta 19W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 4V
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